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大功率GaInP/AlGaInP半导体激光器
徐云; 郭良; 曹青; 宋国峰; 甘巧强; 杨国华; 李玉璋; 陈良惠
2005
Source Publication半导体学报
Volume26Issue:11Pages:2213-2217
Abstract制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658.4nm.器件的内损耗为4.1cm^-1,内量子效率达80%,透明电流密度为648A/cm^2.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2162906
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16879
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐云,郭良,曹青,等. 大功率GaInP/AlGaInP半导体激光器[J]. 半导体学报,2005,26(11):2213-2217.
APA 徐云.,郭良.,曹青.,宋国峰.,甘巧强.,...&陈良惠.(2005).大功率GaInP/AlGaInP半导体激光器.半导体学报,26(11),2213-2217.
MLA 徐云,et al."大功率GaInP/AlGaInP半导体激光器".半导体学报 26.11(2005):2213-2217.
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