SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers
Deng Shengling; Huang Yongzhen; Jin Chaoyuan; Yu Lijuan
2005
Source Publication半导体学报
Volume26Issue:10Pages:1898-1904
AbstractQuantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons. The effects of non-equilibrium distributions are considered at low temperatures. The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed. Also,the improvement of quantum dot lasers' performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density,is calculated.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家高技术研究发展计划,国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:2162916
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16871
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Deng Shengling,Huang Yongzhen,Jin Chaoyuan,et al. Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers[J]. 半导体学报,2005,26(10):1898-1904.
APA Deng Shengling,Huang Yongzhen,Jin Chaoyuan,&Yu Lijuan.(2005).Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers.半导体学报,26(10),1898-1904.
MLA Deng Shengling,et al."Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers".半导体学报 26.10(2005):1898-1904.
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