SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD
Wang Xiaoliang; Liu Xinyu; Hu Guoxin; Wang Junxi; Ma Zhiyong; Wang Cuimei; Li Jianping; Ran Junxue; Zheng Yingkui; Qian He; Zeng Yiping; Li Jinmin
2005
Source Publication半导体学报
Volume26Issue:10Pages:1865-1870
AbstractThe growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.
metadata_83institute of semiconductors, chinese academy of sciences;institute of microelectronics, chinese academy of sciences
Subject Area微电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:2163729
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16865
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Xiaoliang,Liu Xinyu,Hu Guoxin,et al. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报,2005,26(10):1865-1870.
APA Wang Xiaoliang.,Liu Xinyu.,Hu Guoxin.,Wang Junxi.,Ma Zhiyong.,...&Li Jinmin.(2005).X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD.半导体学报,26(10),1865-1870.
MLA Wang Xiaoliang,et al."X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD".半导体学报 26.10(2005):1865-1870.
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