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AlGaAs/GaAsHBT的设计与研制
胡海蓉; 牛萍娟; 胡海洋; 郭维廉
2005
Source Publication河北工业大学学报
Volume34Issue:6Pages:87-90
Abstract分析了A1GaAs/GaAsHBT的原理和材料结构,详细介绍了AlGaAs/GaAsHBT的器件结构及工艺流程,并对两方面进行了优化,研制出了特性较好的AlGaAs/GaAsHBT,其电流放大系数达到180,是目前国内报道的最高水平;开启电压小于0.3V.
metadata_83天津工业大学信息与通信工程学院;中国科学院半导体研究所
Subject Area半导体器件
Funding Organization天津市高等学校科技发展基金资助,天津市应用基础研究重点项目资助
Indexed ByCSCD
Language中文
CSCD IDCSCD:2185597
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16833
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
胡海蓉,牛萍娟,胡海洋,等. AlGaAs/GaAsHBT的设计与研制[J]. 河北工业大学学报,2005,34(6):87-90.
APA 胡海蓉,牛萍娟,胡海洋,&郭维廉.(2005).AlGaAs/GaAsHBT的设计与研制.河北工业大学学报,34(6),87-90.
MLA 胡海蓉,et al."AlGaAs/GaAsHBT的设计与研制".河北工业大学学报 34.6(2005):87-90.
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