SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs
Ding Ying; Wang Wei; Kan Qiang; Wang Baojun; Zhou Fan
2005
Source Publication半导体学报
Volume26Issue:12Pages:2309-2314
AbstractA novel unselective regrowth buried heterostructure long-wavelength superluminescent diode (SLD) with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy (MOVPE). At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.
metadata_83center of optoelectronics research & development, institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金重大研究计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2198529
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16813
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Ding Ying,Wang Wei,Kan Qiang,et al. A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs[J]. 半导体学报,2005,26(12):2309-2314.
APA Ding Ying,Wang Wei,Kan Qiang,Wang Baojun,&Zhou Fan.(2005).A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs.半导体学报,26(12),2309-2314.
MLA Ding Ying,et al."A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs".半导体学报 26.12(2005):2309-2314.
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