SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effects of Cu-Wire Surface Fluctuations on Early Failures
Wang Hui; Zhu Jianjun; Wang Guohong; Bruynseraed C; Maex k
Source Publication半导体学报
AbstractDifferent chemical mechanical polishing (CMP) slurries are used to obtain single-damascene Cu-wires with different surface fluctuations as well as pre-existing surface-defects in wires with rougher surfaces. The presence of such pre-existing defects strongly increases the rate of early failures to almost 100%, reduces electromigration lifetime rapidly to the level of early failures, and changes the multimodal failure distribution into monomodal. The activation energy (0. 74±0.02eV) for the failure mechanism associated with these pre-existing defects confirms a dominant surface diffusion. It shows how a weakest link approximation analysis can he applied to a single wire by dividing the wire into relevant segments and assigning different failure mechanisms to the various segments. The analysis confirms that, although surface-defects are not the fastest early failure mechanism, the ten times higher surface-defectdensity in the rougher wires is responsible for the observed high early-failure rate and unreliable performance.
metadata_83school of microelectronics, shanghai jiaotong university, shanghai 200030;institute of semicodcctors, chinese academy of sciences;imec,leuven 13-3001;e. e. department,k.u. leuven,leuven b-3001
Subject Area光电子学
Funding Organization上海市科委资助项目
Indexed ByCSCD
Date Available2010-11-23
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Document Type期刊论文
Recommended Citation
GB/T 7714
Wang Hui,Zhu Jianjun,Wang Guohong,et al. Effects of Cu-Wire Surface Fluctuations on Early Failures[J]. 半导体学报,2005,26(12):2330-2334.
APA Wang Hui,Zhu Jianjun,Wang Guohong,Bruynseraed C,&Maex k.(2005).Effects of Cu-Wire Surface Fluctuations on Early Failures.半导体学报,26(12),2330-2334.
MLA Wang Hui,et al."Effects of Cu-Wire Surface Fluctuations on Early Failures".半导体学报 26.12(2005):2330-2334.
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