SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
大功率宽面808nm GaAsP/AlGaAs量子阱激光器分别限制结构设计
王俊; 马骁宇; 林涛; 郑凯; 冯小明
2005
Source Publication半导体学报
Volume26Issue:12Pages:2449-2454
Abstract本文对有源区条宽100μm的GaAsP/AlGaAs 808nm量子阱激光器分别限制结构进行了理论分析和设计.选取了三种情况的波导层和限制层的铝组分,分别计算和分析了波导层厚度与激光器光限制因子、最大出光功率、垂直发散角和阈值电流密度的函数关系.根据计算结果可知
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:2198553
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16801
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王俊,马骁宇,林涛,等. 大功率宽面808nm GaAsP/AlGaAs量子阱激光器分别限制结构设计[J]. 半导体学报,2005,26(12):2449-2454.
APA 王俊,马骁宇,林涛,郑凯,&冯小明.(2005).大功率宽面808nm GaAsP/AlGaAs量子阱激光器分别限制结构设计.半导体学报,26(12),2449-2454.
MLA 王俊,et al."大功率宽面808nm GaAsP/AlGaAs量子阱激光器分别限制结构设计".半导体学报 26.12(2005):2449-2454.
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