SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films
Wang Xiaofeng; Huang Fengyi; Sun Guosheng; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Haiou; Duan Xiaofeng
2005
Source Publication半导体学报
Volume26Issue:9Pages:1681-1687
AbstractOne group of SiC films are grown on silicon-on-insulator (SOI) substrates with a series of silicon-overlayer thickness. Raman scattering spectroscopy measurement clearly indicates that a systematic trend of residual stress reduction as the silicon over-layer thickness decreases for the SOI substrates. Strain relaxation in the SiC epilayer is explained by force balance approach and near coincidence lattice model.
metadata_83institute of semiconductors, chinese academy sciences;institute of physics, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2205970
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16793
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Xiaofeng,Huang Fengyi,Sun Guosheng,et al. Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films[J]. 半导体学报,2005,26(9):1681-1687.
APA Wang Xiaofeng.,Huang Fengyi.,Sun Guosheng.,Wang Lei.,Zhao Wanshun.,...&Duan Xiaofeng.(2005).Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films.半导体学报,26(9),1681-1687.
MLA Wang Xiaofeng,et al."Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films".半导体学报 26.9(2005):1681-1687.
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