SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes
Niu Zhichuan; Han Qin; Ni Haiqiao; Yang Xiaohong; Xu Yingqiang; Du Yun; Zhang Shiyong; Peng Hongling; Zhao Huan; Wu Donghai; Li Shuying; He Zhenhong; Ren Zhengwei; Wu Ronghan
2005
Source Publication半导体学报
Volume26Issue:9Pages:1860-1864
AbstractMaterial growth and device fabrication of the first 1.3μm quantum well (QW) edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy (MBE) growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.
metadata_83institute of semiconductors, chinese academy of sciences;institute o f semiconductors , chinese academy of sciences;institute of semiconductors , chinese academy of sciences
Subject Area半导体物理
Funding Organization国家自然科学基金,国家高技术研究发展计划,国家重点基础研究专项资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2205971
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16791
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Niu Zhichuan,Han Qin,Ni Haiqiao,et al. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes[J]. 半导体学报,2005,26(9):1860-1864.
APA Niu Zhichuan.,Han Qin.,Ni Haiqiao.,Yang Xiaohong.,Xu Yingqiang.,...&Wu Ronghan.(2005).Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes.半导体学报,26(9),1860-1864.
MLA Niu Zhichuan,et al."Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes".半导体学报 26.9(2005):1860-1864.
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