SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm
Pan Jiaoqing; Wang Wei; Zhu Hongliang; Zhao Qian; Wang Baojun; Zhou Fan; Wang Lufeng
2005
Source Publication半导体学报
Volume26Issue:9Pages:1688-1691
AbstractThe compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition(MOCVD). A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.
metadata_83optoelectronic research and development center, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2205972
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16789
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Pan Jiaoqing,Wang Wei,Zhu Hongliang,et al. Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm[J]. 半导体学报,2005,26(9):1688-1691.
APA Pan Jiaoqing.,Wang Wei.,Zhu Hongliang.,Zhao Qian.,Wang Baojun.,...&Wang Lufeng.(2005).Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm.半导体学报,26(9),1688-1691.
MLA Pan Jiaoqing,et al."Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm".半导体学报 26.9(2005):1688-1691.
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