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题名: High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures
作者: Zhu ZP(朱占平);  Wang Xiaofeng;  Zeng Yiping;  Wang Baoqiang;  Zhu Zhanping;  Du Xiaoqing;  Li Min;  Chang Benkang
发表日期: 2005
摘要: The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
朱占平;Wang Xiaofeng;Zeng Yiping;Wang Baoqiang;Zhu Zhanping;Du Xiaoqing;Li Min;Chang Benkang.High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures,半导体学报,2005,26(9):1692-1698
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