SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
应变异质结构中超薄中间层的应变协调作用
陈涌海; 杨少延; 王占国
2005
Source Publication半导体学报
Volume26Issue:9Pages:1740-1743
Abstract用一个简单模型讨论了应变异质结构中嵌人中间层对界面失配位错产生和应变释放的影响.根据能量最小原理得到了弹性能最小状态下界面失配位错密度,发现当中间层材料的晶格常数比衬底和外延层的都大或者都小并且厚度足够薄时,超薄中间层可以完全吸收支撑衬底和外延层之间的应变而不产生任何界面失配位错,具有所谓无支撑衬底的应变协调作用.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家重点基础研究发展规划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2205981
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16785
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈涌海,杨少延,王占国. 应变异质结构中超薄中间层的应变协调作用[J]. 半导体学报,2005,26(9):1740-1743.
APA 陈涌海,杨少延,&王占国.(2005).应变异质结构中超薄中间层的应变协调作用.半导体学报,26(9),1740-1743.
MLA 陈涌海,et al."应变异质结构中超薄中间层的应变协调作用".半导体学报 26.9(2005):1740-1743.
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