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快速热退火对高应变InGaAs/GaAs量子阱的影响
苗振华; 徐应强; 张石勇; 吴东海; 赵欢; 牛智川
2005
Source Publication半导体学报
Volume26Issue:9Pages:1749-1752
Abstract用固态分子束外延技术生长了高应变.In0.45Ga0.55As/GaAs量子阱材料.研究了快速热退火对高应变InGaAs/GaAs量子阱材料光学性质的影响.本文采用假设InGaAs/GaAs量子阱中的In—Ga原子扩散为误差函数扩散并解任意形状量子阱的薛定谔方程的方法,对不同退火温度下InGaAs/GaAs量子阱室温光致发光峰值波长拟合,得到了In原子在高应变InGaAs/GaAs量子阱中的扩散系数以及扩散激活能(O.88ev).
metadata_83中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2205983
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16783
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
苗振华,徐应强,张石勇,等. 快速热退火对高应变InGaAs/GaAs量子阱的影响[J]. 半导体学报,2005,26(9):1749-1752.
APA 苗振华,徐应强,张石勇,吴东海,赵欢,&牛智川.(2005).快速热退火对高应变InGaAs/GaAs量子阱的影响.半导体学报,26(9),1749-1752.
MLA 苗振华,et al."快速热退火对高应变InGaAs/GaAs量子阱的影响".半导体学报 26.9(2005):1749-1752.
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