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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth
作者: Zhao Qian;  Pan Jiaoqing;  Zhou Fan;  Wang Baojun;  Wang Lufeng;  Wang Wei
发表日期: 2005
摘要: A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.
刊名: Chinese Physics Letters
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao Qian;Pan Jiaoqing;Zhou Fan;Wang Baojun;Wang Lufeng;Wang Wei.A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth,Chinese Physics Letters,2005,22(8):2016-2019
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