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掺镨GaN薄膜的微结构与光致发光
宋淑芳; 陈维德; 张春光; 卞留芳; 许振嘉
2005
Source Publication发光学报
Volume26Issue:4Pages:513-516
Abstract利用背散射/沟道(RBS/C)技术、原子力显微镜(AFM)和光致发光(PL)谱研究了掺镨GaN薄膜的微结构和可见光发光特性。RBS/C结果表明,注入Pr后,在注入层引入了晶格损伤;注入样品经1050℃退火后,部分损伤得到恢复,但是晶体质量没有恢复到注入前的状态。AFM结果表明,注入Pr后,表面凹凸不平,而且在注入区引起了膨胀,膨胀幅度达到23.368nm左右。PL结果表明,在850—1050℃退火,发光强度按e指数增加;当退火温度达到1050℃,发光强度最强,经过数据拟合可得Pr^3+的热激活能为5.8eV。
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2235708
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16757
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
宋淑芳,陈维德,张春光,等. 掺镨GaN薄膜的微结构与光致发光[J]. 发光学报,2005,26(4):513-516.
APA 宋淑芳,陈维德,张春光,卞留芳,&许振嘉.(2005).掺镨GaN薄膜的微结构与光致发光.发光学报,26(4),513-516.
MLA 宋淑芳,et al."掺镨GaN薄膜的微结构与光致发光".发光学报 26.4(2005):513-516.
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