SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InAs Wires on InP (001)
Wu Ju; Wang Zhanguo
2006
Source Publication半导体学报
Volume27Issue:2Pages:197-203
metadata_83Institute of Semiconductors,Chinese Academy of Sciences
Other AbstractThe heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy. These InAs wires have some distinctive features in their growth and structure. This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently.
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:2317880
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16733
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wu Ju,Wang Zhanguo. InAs Wires on InP (001)[J]. 半导体学报,2006,27(2):197-203.
APA Wu Ju,&Wang Zhanguo.(2006).InAs Wires on InP (001).半导体学报,27(2),197-203.
MLA Wu Ju,et al."InAs Wires on InP (001)".半导体学报 27.2(2006):197-203.
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