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纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用
郭亨群; 林赏心; 王启明
2006
Source Publication半导体学报
Volume27Issue:2Pages:345-349
Abstract采用射频磁控溅射技术和热退火处理制备了纳米Si镶嵌SiO2薄膜,在室温下观察到光致发光现象,峰值分别位于360,430和835nm,结合吸收谱、光致发光激发谱和X射线衍射分析讨论了发光机理.利用纳米Si镶嵌SiO2薄膜的非线性光学特性可作为可饱和吸收体,在Nd
metadata_83华侨大学;中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金重点资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2317922
Date Available2010-11-23
Citation statistics
Cited Times:10[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16725
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郭亨群,林赏心,王启明. 纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用[J]. 半导体学报,2006,27(2):345-349.
APA 郭亨群,林赏心,&王启明.(2006).纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用.半导体学报,27(2),345-349.
MLA 郭亨群,et al."纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用".半导体学报 27.2(2006):345-349.
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