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低温GaAs被动调Q锁模Nd:Gd0.42Y0.58VO4混晶激光器特性研究
卓壮; 姜其畅; 王勇刚; 苏艳丽; 李涛; 李建
2006
Source Publication光学学报
Volume26Issue:1Pages:77-80
Abstract采用低温生长GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd∶Gd0.42Y0.58VO4混晶激光器的调Q锁模运转。研究了Nd∶Gd0.42Y0.58VO4激光器的基频运转特性。在输出镜透射率T=10%、腔长L=40 mm的情况下,当抽运功率为8.6 W时,获得激光输出功率3.78 W,光光转换效率为43.9%。并测量了Nd∶Gd0.42Y0.58VO4混晶被动调Q激光器的输出特性。实验结果表明激光器调Q运转阈值为2 W,当抽运功率为3.7 W时,激光器出现调Q锁模行为;当抽运功率为8.6 W时,激光器调Q锁模深度达70%以上,对应的脉冲包络重复频率为670 kHz,半峰全宽为180 ns,平均输出功率为1.35 W,光光转换效率为15.7%。
metadata_83山东师范大学物理与电子科学学院;中国科学院半导体研究所
Subject Area半导体器件
Funding Organization山东省科技厅科技攻关计划资助课题
Indexed ByCSCD
Language中文
CSCD IDCSCD:2327956
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16713
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卓壮,姜其畅,王勇刚,等. 低温GaAs被动调Q锁模Nd:Gd0.42Y0.58VO4混晶激光器特性研究[J]. 光学学报,2006,26(1):77-80.
APA 卓壮,姜其畅,王勇刚,苏艳丽,李涛,&李建.(2006).低温GaAs被动调Q锁模Nd:Gd0.42Y0.58VO4混晶激光器特性研究.光学学报,26(1),77-80.
MLA 卓壮,et al."低温GaAs被动调Q锁模Nd:Gd0.42Y0.58VO4混晶激光器特性研究".光学学报 26.1(2006):77-80.
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