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Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃
ZHAO Lei; Zuo Yuhua; Li Chuanbo; Cheng Buwen; Luo Liping; Yu Jinzhong; Wang Qiming
2006
Source Publication功能材料与器件学报
Volume12Issue:1Pages:5-9
AbstractThe relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding OrganizationNational Science Foundation of China,973 Programs
Indexed ByCSCD
Language英语
CSCD IDCSCD:2349676
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16693
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
ZHAO Lei,Zuo Yuhua,Li Chuanbo,et al. Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃[J]. 功能材料与器件学报,2006,12(1):5-9.
APA ZHAO Lei.,Zuo Yuhua.,Li Chuanbo.,Cheng Buwen.,Luo Liping.,...&Wang Qiming.(2006).Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃.功能材料与器件学报,12(1),5-9.
MLA ZHAO Lei,et al."Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃".功能材料与器件学报 12.1(2006):5-9.
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