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题名: Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃
作者: ZHAO Lei;  Zuo Yuhua;  Li Chuanbo;  Cheng Buwen;  Luo Liping;  Yu Jinzhong;  Wang Qiming
发表日期: 2006
摘要: The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.
刊名: 功能材料与器件学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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ZHAO Lei;Zuo Yuhua;Li Chuanbo;Cheng Buwen;Luo Liping;Yu Jinzhong;Wang Qiming.Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃,功能材料与器件学报,2006,12(1):5-9
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