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Low -temperature preparation of ZnO films on Si substrates by MOCVD
SHEN Wenjuan; Wang Jun; Wang Qiyuan; Duan Yao; Zeng Yiping
2006
Source Publication功能材料与器件学报
Volume12Issue:1Pages:63-66
AbstractZnO films were deposited on Si(100) substrates at 300℃ by metal - organic chemical vapor deposition(MOCVD). The effect of different ratios of DEZn to N2O on crystal quality was analyzed. It is found that the optimum ratio of DEZn to N2O is 2.1. And in this optimum growth condition, X - ray diffraction (XRD) and scanning probe morphology (SPM) images indicate that the films grow along the c - axis orientation. ZnO film exhibits a strong UV optical absorption near 388 nm. And the optical absorbance is close to zero,that indicates nearly 100% optical transparence. Photoluminescence (PL) spectrum shows only strong near - band - edge emissions with little or no deep - level emission related to defects. The full - width at half - maximum (FWHM) of the ultraviolet emission peak is 80meV. The results indicate that better crystal quality can be obtained.
metadata_83materials center, institute of semiconductors, chinese academy of science
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:2349688
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16691
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
SHEN Wenjuan,Wang Jun,Wang Qiyuan,et al. Low -temperature preparation of ZnO films on Si substrates by MOCVD[J]. 功能材料与器件学报,2006,12(1):63-66.
APA SHEN Wenjuan,Wang Jun,Wang Qiyuan,Duan Yao,&Zeng Yiping.(2006).Low -temperature preparation of ZnO films on Si substrates by MOCVD.功能材料与器件学报,12(1),63-66.
MLA SHEN Wenjuan,et al."Low -temperature preparation of ZnO films on Si substrates by MOCVD".功能材料与器件学报 12.1(2006):63-66.
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