SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy
Tan P H; Luo X D; Ge W K; Xu Z Y; Zhang Y; Mascarenhas A; Xin H P; Tu C W
2006
Source Publication半导体学报
Volume27Issue:3Pages:397-402
metadata_83institute of semiconductors,chinese academy of sciences;department of physics, hong kong university of science and technology;national renewable energy laboratory;department of electrical and computer engineering,university of california at san diego
Other AbstractThe transitions of E0 ,E0 +A0, and E+ in dilute GaAs(1-x) Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E+ and E0 + A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.
Subject Area半导体物理
Funding Organization国家自然科学基金,国家重点基础研究专项基金,江苏省自然科学基金,香港RGC基金,美国ODE基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2350988
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16685
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Tan P H,Luo X D,Ge W K,et al. Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy[J]. 半导体学报,2006,27(3):397-402.
APA Tan P H.,Luo X D.,Ge W K.,Xu Z Y.,Zhang Y.,...&Tu C W.(2006).Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy.半导体学报,27(3),397-402.
MLA Tan P H,et al."Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy".半导体学报 27.3(2006):397-402.
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