SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth
Chen Jun; Wang Jianfeng; Wang Hui; Zhao Degang; Zhu Jianjun; Zhang Shuming; Yang Hui
2006
Source Publication半导体学报
Volume27Issue:3Pages:419-424
AbstractHigh quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2350992
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16683
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Chen Jun,Wang Jianfeng,Wang Hui,et al. Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth[J]. 半导体学报,2006,27(3):419-424.
APA Chen Jun.,Wang Jianfeng.,Wang Hui.,Zhao Degang.,Zhu Jianjun.,...&Yang Hui.(2006).Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth.半导体学报,27(3),419-424.
MLA Chen Jun,et al."Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth".半导体学报 27.3(2006):419-424.
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