SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy
Niu Zhichuan; Ni Haiqiao; Fang Zhidan; Gong Zheng; Zhang Shiyong; Wu Donghai; Sun Zheng; Zhao Huan; Peng Hongling; Han Qin; Wu Ronghan
2006
Source Publication半导体学报
Volume27Issue:3Pages:482-488
AbstractThe growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体物理
Funding Organization国家重点基础研究发展计划资助项目,国家自然科学基金,国家高技术发展研究计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:2351005
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16681
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Niu Zhichuan,Ni Haiqiao,Fang Zhidan,et al. 1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy[J]. 半导体学报,2006,27(3):482-488.
APA Niu Zhichuan.,Ni Haiqiao.,Fang Zhidan.,Gong Zheng.,Zhang Shiyong.,...&Wu Ronghan.(2006).1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy.半导体学报,27(3),482-488.
MLA Niu Zhichuan,et al."1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy".半导体学报 27.3(2006):482-488.
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