SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics
Li Deyao; Huang Yongzhen; Zhang Shuming; Zhong Ming; Ye Xiaojun; Zhu Jianjun; Zhao Degang; Chen Lianghui; Yang Hui; Liang Junwu
2006
Source Publication半导体学报
Volume27Issue:3Pages:499-505
AbstractTime-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2351013
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16679
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li Deyao,Huang Yongzhen,Zhang Shuming,et al. Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics[J]. 半导体学报,2006,27(3):499-505.
APA Li Deyao.,Huang Yongzhen.,Zhang Shuming.,Zhong Ming.,Ye Xiaojun.,...&Liang Junwu.(2006).Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics.半导体学报,27(3),499-505.
MLA Li Deyao,et al."Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics".半导体学报 27.3(2006):499-505.
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