SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1.55μm低温生长GaAs谐振腔增强型探测器
韩勤; 彭红玲; 杜云; 倪海桥; 赵欢; 牛智川; 吴荣汉
2006
Source Publication光子学报
Volume35Issue:4Pages:549-551
Abstract利用低温(200℃)生长的GaAs材料作为吸收层制备了GaAs基1.55μm谐振腔增强型(RCE)光电探测器,对其光电特性进行了分析、研究.无光照0偏压下探测器暗电流为8.0×10^12A;光电流谱峰值波长1563nm;响应谱线半宽4nm,具有良好的波长选择性.
metadata_83中国科学院半导体研究所
Subject Area半导体器件
Funding Organization国家自然科学基金,国家973计划,863计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2355751
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16673
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
韩勤,彭红玲,杜云,等. 1.55μm低温生长GaAs谐振腔增强型探测器[J]. 光子学报,2006,35(4):549-551.
APA 韩勤.,彭红玲.,杜云.,倪海桥.,赵欢.,...&吴荣汉.(2006).1.55μm低温生长GaAs谐振腔增强型探测器.光子学报,35(4),549-551.
MLA 韩勤,et al."1.55μm低温生长GaAs谐振腔增强型探测器".光子学报 35.4(2006):549-551.
Files in This Item:
File Name/Size DocType Version Access License
4293.pdf(183KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[韩勤]'s Articles
[彭红玲]'s Articles
[杜云]'s Articles
Baidu academic
Similar articles in Baidu academic
[韩勤]'s Articles
[彭红玲]'s Articles
[杜云]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[韩勤]'s Articles
[彭红玲]'s Articles
[杜云]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.