SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
键合法制备硅基1.55μm InP-InGaAsP量子阱激光器
于丽娟; 赵洪泉; 杜云; 黄永箴
2006
Source Publication半导体学报
Volume27Issue:4Pages:741-743
Abstract在硅基上成功地制备出了1.55μm InP-InGaAsP量子阱激光器.设计并生长了适合于键合的量子阱激光器结构材料,通过直接键合技术,将Si衬底与InP-InGaAsP外延片键合到一起.剥离去掉InP衬底后,在5~6μm的薄膜上制备出20μm条形边发射激光器.室温下,阈值电流160mA(电流密度为2.7kA/cm^2),功率可达10mW以上(在约350mA电流下),实现了1.55μm长波长边发射激光器与Si的集成.目前,该结果国际上还未见报道.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2358806
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16651
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
于丽娟,赵洪泉,杜云,等. 键合法制备硅基1.55μm InP-InGaAsP量子阱激光器[J]. 半导体学报,2006,27(4):741-743.
APA 于丽娟,赵洪泉,杜云,&黄永箴.(2006).键合法制备硅基1.55μm InP-InGaAsP量子阱激光器.半导体学报,27(4),741-743.
MLA 于丽娟,et al."键合法制备硅基1.55μm InP-InGaAsP量子阱激光器".半导体学报 27.4(2006):741-743.
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