SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC
Xiao Zhiqiang; Hong Genshen; Zhang Bo; Liu Zhongli
2006
Source Publication半导体学报
Volume27Issue:10Pages:1750-1754
AbstractThis paper presents the total dose radiation performance of 0. S^m SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad(Si) .The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at lMrad(Si) and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to lMrad(Si). The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad(Si).
metadata_83ic design center, university of electronic science and technology of china;the. 5&th research institute, china electronics technology group corporation;institute of semiconductors, chinese academy of sciences
Subject Area微电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:2429673
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16607
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Xiao Zhiqiang,Hong Genshen,Zhang Bo,et al. Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC[J]. 半导体学报,2006,27(10):1750-1754.
APA Xiao Zhiqiang,Hong Genshen,Zhang Bo,&Liu Zhongli.(2006).Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC.半导体学报,27(10),1750-1754.
MLA Xiao Zhiqiang,et al."Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC".半导体学报 27.10(2006):1750-1754.
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