SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
ZnO单晶的缺陷及其对材料性质的影响
魏学成; 赵有文; 董志远; 李晋闽
2006
Source Publication半导体学报
Volume27Issue:10Pages:1759-1762
Abstract利用X射线衍射技术、荧光光谱、霍尔效应和光学显微等方法分别研究了ZnO单晶的品格完整性、深能级缺陷、电学性质、位错和生长极性.通过比较ZnO单晶材料在退火前后的测试结果,分析了材料的缺陷属性和缺陷对材料性质、晶体完整性的影响.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:2429675
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16605
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
魏学成,赵有文,董志远,等. ZnO单晶的缺陷及其对材料性质的影响[J]. 半导体学报,2006,27(10):1759-1762.
APA 魏学成,赵有文,董志远,&李晋闽.(2006).ZnO单晶的缺陷及其对材料性质的影响.半导体学报,27(10),1759-1762.
MLA 魏学成,et al."ZnO单晶的缺陷及其对材料性质的影响".半导体学报 27.10(2006):1759-1762.
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