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题名: MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
作者: Wang Xiaoliang;  Hu Guoxin;  Ma Zhiyong;  Xiao Hongling;  Wang Cuimei;  Luo Weijun;  Liu Xinyu;  Chen Xiaojuan;  Li Jianping;  Li Jinmin;  Qian He;  Wang Zhanguo
发表日期: 2006
摘要: AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V · s) at room temperature and 11588cm2/(V· s) at 80K with almost equal 2DEG concentrations of about 1.03 × 1013 cm-2 High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0. 27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang Xiaoliang;Hu Guoxin;Ma Zhiyong;Xiao Hongling;Wang Cuimei;Luo Weijun;Liu Xinyu;Chen Xiaojuan;Li Jianping;Li Jinmin;Qian He;Wang Zhanguo.MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC,半导体学报,2006,27(9):1521-1525
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