With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.
Luo Weijun;Chen Xiaojuan;Liang Xiaoxin;Ma Xiaolin;Liu Xinyu;Wang Xiaoliang.A Radial Stub Test Circuit for Microwave Power Devices,半导体学报,2006,27(9):1557-1561
