SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
全硅片上光互连用波导
代晓光; 牛萍娟; 张宇; 陈弘达; 毛陆虹; 郭维廉
2006
Source Publication激光与光电子学进展
Volume43Issue:8Pages:27-31
Abstract较详细地分析了用于全硅片上光互连所用光波导(如多晶Si/SiO2、Si/SiO2、Si3N4/SiO2)需满足的基本条件、制作方法以及损耗机制,总结了目前的研究进展。
metadata_83天津工业大学信息与通信工程学院;中国科学院半导体研究所;天津大学电子信息工程学院
Subject Area光电子学
Funding Organization国家自然科学基金项目,天津市应用基础研究重点项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2479273
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16567
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
代晓光,牛萍娟,张宇,等. 全硅片上光互连用波导[J]. 激光与光电子学进展,2006,43(8):27-31.
APA 代晓光,牛萍娟,张宇,陈弘达,毛陆虹,&郭维廉.(2006).全硅片上光互连用波导.激光与光电子学进展,43(8),27-31.
MLA 代晓光,et al."全硅片上光互连用波导".激光与光电子学进展 43.8(2006):27-31.
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