SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高质量InAs单晶材料的制备及其性质
赵有文; 孙文荣; 段满龙; 董志远; 杨子祥; 吕旭如; 王应利
2006
Source Publication半导体学报
Volume27Issue:8Pages:1391-1395
Abstract利用液封直拉法(LEC)生长了直径50mm〈100〉和(111〉晶向的InAs单晶.分析研究了n型杂质Sn,S和p型杂质Zn,Mn的分凝特性、晶格硬化作用、掺杂效率等.利用X射线双晶衍射分析了晶体的完整性.对InAs晶片的抛光、化学腐蚀和清洗进行了分析,在此基础上实现了抛光晶片的开盒即用(EPI—READY).
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:2551369
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16529
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
赵有文,孙文荣,段满龙,等. 高质量InAs单晶材料的制备及其性质[J]. 半导体学报,2006,27(8):1391-1395.
APA 赵有文.,孙文荣.,段满龙.,董志远.,杨子祥.,...&王应利.(2006).高质量InAs单晶材料的制备及其性质.半导体学报,27(8),1391-1395.
MLA 赵有文,et al."高质量InAs单晶材料的制备及其性质".半导体学报 27.8(2006):1391-1395.
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