Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications

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	Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications
	Ma Long; Huang Yinglong; Zhang Yang; Wang Liangchen; Yang Fuhua; Zeng Yiping
	2006
Source Publication	半导体学报
Volume	27 Issue:6 Pages:959-962
Abstract	A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.
metadata_83	research center of semiconductor integration technology, institute of semiconductors, chinese academy of sciences;novel semiconductor material laboratory, institute of semiconductors, chinese academy of sciences
Subject Area	半导体材料
Funding Organization	国家高技术研究发展计划资助项目
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:2551471
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/16515
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Ma Long,Huang Yinglong,Zhang Yang,et al. Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications[J]. 半导体学报,2006,27(6):959-962.
APA	Ma Long,Huang Yinglong,Zhang Yang,Wang Liangchen,Yang Fuhua,&Zeng Yiping.(2006).Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications.半导体学报,27(6),959-962.
MLA	Ma Long,et al."Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications".半导体学报 27.6(2006):959-962.

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