SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications
Ma Long; Huang Yinglong; Zhang Yang; Wang Liangchen; Yang Fuhua; Zeng Yiping
2006
Source Publication半导体学报
Volume27Issue:6Pages:959-962
AbstractA high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode (RTD) on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio (PVCR) of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.
metadata_83research center of semiconductor integration technology, institute of semiconductors, chinese academy of sciences;novel semiconductor material laboratory, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2551471
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16515
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Ma Long,Huang Yinglong,Zhang Yang,et al. Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications[J]. 半导体学报,2006,27(6):959-962.
APA Ma Long,Huang Yinglong,Zhang Yang,Wang Liangchen,Yang Fuhua,&Zeng Yiping.(2006).Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications.半导体学报,27(6),959-962.
MLA Ma Long,et al."Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications".半导体学报 27.6(2006):959-962.
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