SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High-Power Distributed Feedback Laser Diodes Emitting at 820nm
Fu Shenghui; Song Guofeng; Zhong Yuan; Chen Lianghui
2006
Source Publication半导体学报
Volume27Issue:6Pages:966-969
AbstractBy etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2551477
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16513
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Fu Shenghui,Song Guofeng,Zhong Yuan,et al. High-Power Distributed Feedback Laser Diodes Emitting at 820nm[J]. 半导体学报,2006,27(6):966-969.
APA Fu Shenghui,Song Guofeng,Zhong Yuan,&Chen Lianghui.(2006).High-Power Distributed Feedback Laser Diodes Emitting at 820nm.半导体学报,27(6),966-969.
MLA Fu Shenghui,et al."High-Power Distributed Feedback Laser Diodes Emitting at 820nm".半导体学报 27.6(2006):966-969.
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