SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions
Ma Desheng; Shi Yin; Dai Fafoster
2006
Source Publication半导体学报
Volume27Issue:6Pages:970-975
AbstractWe present the design of a wide-band low-noise amplifier (LNA) implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1 ~ 1GHz wide bandwidth and 18. 8dB gain with less than 1.4dB of gain variation. The noise figure of the wideband LNA is 5dB, and its 1dB compression point is - 2dBm and IIP3 is 8dBm. The LNA dissipates 120mW of power with a 5V supply.
metadata_83artificial neural network and high speed circuit laboratory, institute of semiconductors, chinese academy of sciences;department of electrical & computer engineering, auburn university, auburn
Subject Area微电子学
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2551478
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16511
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Ma Desheng,Shi Yin,Dai Fafoster. A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions[J]. 半导体学报,2006,27(6):970-975.
APA Ma Desheng,Shi Yin,&Dai Fafoster.(2006).A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions.半导体学报,27(6),970-975.
MLA Ma Desheng,et al."A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions".半导体学报 27.6(2006):970-975.
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