Knowledge Management System Of Institute of Semiconductors,CAS
Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate | |
Xue Chunlai![]() | |
2006 | |
Source Publication | 半导体学报
![]() |
Volume | 27Issue:5Pages:769-773 |
Abstract | The effects of key geometrical parameters on the performance of integrated spiral inductors are investigated with the 3D electromagnetic simulator HFSS. While varying geometrical parameters such as the number of turns (N),the width of the metal traces (W),the spacing between the traces (S),and the inner diameter (ID), changes in the performance of the inductors are analyzed in detail. The reasons for these changes in performance are presented. Simulation results indicate that the performance of an integrated spiral inductor can be improved by optimizing its layout. Some design rules are summarized. |
metadata_83 | institute of semiconductors chinese academy of sciences |
Subject Area | 光电子学 |
Funding Organization | 国家高技术研究发展计划,国家重点基础研究发展规划,国家自然科学基金资助项目 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:2551555 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/16503 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Xue Chunlai,Yao Fei,Chen Buwen,et al. Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate[J]. 半导体学报,2006,27(5):769-773. |
APA | Xue Chunlai,Yao Fei,Chen Buwen,&Wang Qiming.(2006).Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate.半导体学报,27(5),769-773. |
MLA | Xue Chunlai,et al."Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate".半导体学报 27.5(2006):769-773. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
4182.pdf(473KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment