An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices
	Yu Hejun; Yu Jinzhong; Chen Shaowu
	2006
Source Publication	半导体学报
Volume	27 Issue:11 Pages:1894-1899
Abstract	We present an all-e-beam lithography (EBL) process for the patterning of photonic crystal waveguides.The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size (less than 10nm). With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled.The second step is the exposure of the access waveguides at a larger step size (about 30nm) to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.
metadata_83	institute of semiconductors, chinese academy of sciences
Subject Area	光电子学
Funding Organization	National Natural Science Foundation of China
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:2615817
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/16485
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Yu Hejun,Yu Jinzhong,Chen Shaowu. An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices[J]. 半导体学报,2006,27(11):1894-1899.
APA	Yu Hejun,Yu Jinzhong,&Chen Shaowu.(2006).An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices.半导体学报,27(11),1894-1899.
MLA	Yu Hejun,et al."An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices".半导体学报 27.11(2006):1894-1899.

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