Knowledge Management System Of Institute of Semiconductors,CAS
Analysis of Si/GaAs Bonding Stresses with the Finite Element Method | |
He Guorong; Yang Guohua; Zheng Wanhua; Wu Xuming![]() ![]() ![]() | |
2006 | |
Source Publication | 半导体学报
![]() |
Volume | 27Issue:11Pages:1906-1910 |
Abstract | In conjunction with ANSYS, we use the finite element method to analyze the bonding stresses of Si/GaAs. We also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress,and peeling stress,taking into full consideration the thermal expansion coefficient as a function of temperature. Novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures. Calculations show the validity of this new structure. |
metadata_83 | institute of semiconductors, chinese academy of sciences |
Subject Area | 光电子学 |
Funding Organization | State Key Development Program for Basic Research of China |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:2615819 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/16483 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | He Guorong,Yang Guohua,Zheng Wanhua,et al. Analysis of Si/GaAs Bonding Stresses with the Finite Element Method[J]. 半导体学报,2006,27(11):1906-1910. |
APA | He Guorong.,Yang Guohua.,Zheng Wanhua.,Wu Xuming.,Wang Xiaodong.,...&Chen Lianghui.(2006).Analysis of Si/GaAs Bonding Stresses with the Finite Element Method.半导体学报,27(11),1906-1910. |
MLA | He Guorong,et al."Analysis of Si/GaAs Bonding Stresses with the Finite Element Method".半导体学报 27.11(2006):1906-1910. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
4171.pdf(367KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment