Knowledge Management System Of Institute of Semiconductors,CAS
| Analysis of Si/GaAs Bonding Stresses with the Finite Element Method | |
He Guorong; Yang Guohua; Zheng Wanhua; Wu Xuming ; Wang Xiaodong; Cao Yulian; Wang Qing; Chen Lianghui
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| 2006 | |
| Source Publication | 半导体学报
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| Volume | 27Issue:11Pages:1906-1910 |
| Abstract | In conjunction with ANSYS, we use the finite element method to analyze the bonding stresses of Si/GaAs. We also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress,and peeling stress,taking into full consideration the thermal expansion coefficient as a function of temperature. Novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures. Calculations show the validity of this new structure. |
| metadata_83 | institute of semiconductors, chinese academy of sciences |
| Subject Area | 光电子学 |
| Funding Organization | State Key Development Program for Basic Research of China |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:2615819 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/16483 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | He Guorong,Yang Guohua,Zheng Wanhua,et al. Analysis of Si/GaAs Bonding Stresses with the Finite Element Method[J]. 半导体学报,2006,27(11):1906-1910. |
| APA | He Guorong.,Yang Guohua.,Zheng Wanhua.,Wu Xuming.,Wang Xiaodong.,...&Chen Lianghui.(2006).Analysis of Si/GaAs Bonding Stresses with the Finite Element Method.半导体学报,27(11),1906-1910. |
| MLA | He Guorong,et al."Analysis of Si/GaAs Bonding Stresses with the Finite Element Method".半导体学报 27.11(2006):1906-1910. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4171.pdf（367KB） | 限制开放 | -- | Application Full Text | |||
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