In conjunction with ANSYS, we use the finite element method to analyze the bonding stresses of Si/GaAs. We also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress,and peeling stress,taking into full consideration the thermal expansion coefficient as a function of temperature. Novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures. Calculations show the validity of this new structure.
He Guorong;Yang Guohua;Zheng Wanhua;Wu Xuming;Wang Xiaodong;Cao Yulian;Wang Qing;Chen Lianghui.Analysis of Si/GaAs Bonding Stresses with the Finite Element Method,半导体学报,2006,27(11):1906-1910
