SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Analysis of Si/GaAs Bonding Stresses with the Finite Element Method
He Guorong; Yang Guohua; Zheng Wanhua; Wu Xuming; Wang Xiaodong; Cao Yulian; Wang Qing; Chen Lianghui
2006
Source Publication半导体学报
Volume27Issue:11Pages:1906-1910
AbstractIn conjunction with ANSYS, we use the finite element method to analyze the bonding stresses of Si/GaAs. We also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress,and peeling stress,taking into full consideration the thermal expansion coefficient as a function of temperature. Novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures. Calculations show the validity of this new structure.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding OrganizationState Key Development Program for Basic Research of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:2615819
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16483
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
He Guorong,Yang Guohua,Zheng Wanhua,et al. Analysis of Si/GaAs Bonding Stresses with the Finite Element Method[J]. 半导体学报,2006,27(11):1906-1910.
APA He Guorong.,Yang Guohua.,Zheng Wanhua.,Wu Xuming.,Wang Xiaodong.,...&Chen Lianghui.(2006).Analysis of Si/GaAs Bonding Stresses with the Finite Element Method.半导体学报,27(11),1906-1910.
MLA He Guorong,et al."Analysis of Si/GaAs Bonding Stresses with the Finite Element Method".半导体学报 27.11(2006):1906-1910.
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