Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power

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	Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power
	Qin Han; Zhichuan Niu; Haiqiao Ni; Shiyong Zhang; Xiaohong Yang; Yun Du; Cunzhu Tong; Huan Zhao; Yingqiang Xu; Hongling Peng; Ronghan Wu
	2006
Source Publication	Chinese Optics Letters
Volume	4 Issue:7 Pages:413-415
Abstract	Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.
metadata_83	instituter of smienductor, chinese academy of scinces
Subject Area	半导体物理
Funding Organization	This work was supported by the Major State Key Basic Research Program,the National "863" Program of China,the National Natural Science Foundation of China
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:2621444
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/16469
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Qin Han,Zhichuan Niu,Haiqiao Ni,et al. Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power[J]. Chinese Optics Letters,2006,4(7):413-415.
APA	Qin Han.,Zhichuan Niu.,Haiqiao Ni.,Shiyong Zhang.,Xiaohong Yang.,...&Ronghan Wu.(2006).Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power.Chinese Optics Letters,4(7),413-415.
MLA	Qin Han,et al."Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power".Chinese Optics Letters 4.7(2006):413-415.

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