SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power
Qin Han; Zhichuan Niu; Haiqiao Ni; Shiyong Zhang; Xiaohong Yang; Yun Du; Cunzhu Tong; Huan Zhao; Yingqiang Xu; Hongling Peng; Ronghan Wu
2006
Source PublicationChinese Optics Letters
Volume4Issue:7Pages:413-415
AbstractContinuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.
metadata_83instituter of smienductor, chinese academy of scinces
Subject Area半导体物理
Funding OrganizationThis work was supported by the Major State Key Basic Research Program,the National "863" Program of China,the National Natural Science Foundation of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:2621444
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16469
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Qin Han,Zhichuan Niu,Haiqiao Ni,et al. Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power[J]. Chinese Optics Letters,2006,4(7):413-415.
APA Qin Han.,Zhichuan Niu.,Haiqiao Ni.,Shiyong Zhang.,Xiaohong Yang.,...&Ronghan Wu.(2006).Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power.Chinese Optics Letters,4(7),413-415.
MLA Qin Han,et al."Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power".Chinese Optics Letters 4.7(2006):413-415.
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