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Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power | |
Qin Han![]() ![]() ![]() ![]() ![]() | |
2006 | |
Source Publication | Chinese Optics Letters
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Volume | 4Issue:7Pages:413-415 |
Abstract | Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree. |
metadata_83 | instituter of smienductor, chinese academy of scinces |
Subject Area | 半导体物理 |
Funding Organization | This work was supported by the Major State Key Basic Research Program,the National "863" Program of China,the National Natural Science Foundation of China |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:2621444 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/16469 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Qin Han,Zhichuan Niu,Haiqiao Ni,et al. Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power[J]. Chinese Optics Letters,2006,4(7):413-415. |
APA | Qin Han.,Zhichuan Niu.,Haiqiao Ni.,Shiyong Zhang.,Xiaohong Yang.,...&Ronghan Wu.(2006).Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power.Chinese Optics Letters,4(7),413-415. |
MLA | Qin Han,et al."Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power".Chinese Optics Letters 4.7(2006):413-415. |
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