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射频磁控溅射制备掺Al的纳米Si-SiO_2复合薄膜及其光致发光特性
郭亨群; 杨琳琳; 王启明
2006
Source Publication功能材料
Volume37Issue:11Pages:1706-1708
Abstract采用射频磁控技术和退火处理制备掺Al的纳米Si-SiO_2复合薄膜.通过X射线衍射(XRD)、X射线光电子能谱(XPS)和傅里叶变换红外光谱(FTIR)表征了薄膜的结构,组分和成键情况.掺Al在SiO_2中造成氧空位,使薄膜光致发光强度增强,并出现新的发光峰.退火温度对掺Al薄膜的光致发光的峰位和峰强有较大影响.
metadata_83华侨大学,信息科学与工程学院;中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金重点资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2629349
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16453
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郭亨群,杨琳琳,王启明. 射频磁控溅射制备掺Al的纳米Si-SiO_2复合薄膜及其光致发光特性[J]. 功能材料,2006,37(11):1706-1708.
APA 郭亨群,杨琳琳,&王启明.(2006).射频磁控溅射制备掺Al的纳米Si-SiO_2复合薄膜及其光致发光特性.功能材料,37(11),1706-1708.
MLA 郭亨群,et al."射频磁控溅射制备掺Al的纳米Si-SiO_2复合薄膜及其光致发光特性".功能材料 37.11(2006):1706-1708.
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