SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Persistent Photoconductivity in n-type GaN
Deng Dongmei; Wang Jinyan; Zhao Degang; Wen Zheng
2006
Source PublicationSemiconductor Photonics and Technology
Volume12Issue:2Pages:77-80
AbstractThe persistent photoconductivity(PPC) phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition(MOCVD) have been studied. After using some testing and analysis methods, such as the double crystal X-ray diffraction(DCXRD), the photolumineseence(PL) spectra, etc, it is found that the issue which influences PPC in n-type GaN is not relative to the dislocations and yellow band (YB), and is caused by the doping level of Si most likely.
metadata_83institute of microelectronics, peking university;institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:2631578
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16447
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Deng Dongmei,Wang Jinyan,Zhao Degang,et al. Persistent Photoconductivity in n-type GaN[J]. Semiconductor Photonics and Technology,2006,12(2):77-80.
APA Deng Dongmei,Wang Jinyan,Zhao Degang,&Wen Zheng.(2006).Persistent Photoconductivity in n-type GaN.Semiconductor Photonics and Technology,12(2),77-80.
MLA Deng Dongmei,et al."Persistent Photoconductivity in n-type GaN".Semiconductor Photonics and Technology 12.2(2006):77-80.
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