SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals
Yang Linlin; Guo Hengqun; Zeng Youhua; Wang Qiming
2006
Source PublicationSemiconductor Photonics and Technology
Volume12Issue:2Pages:90-94
AbstractSi-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee(PL) from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.
metadata_83college of information science and engineering, huaqiao university;institute of semiconductors, cass
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:2631581
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16445
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yang Linlin,Guo Hengqun,Zeng Youhua,et al. 360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals[J]. Semiconductor Photonics and Technology,2006,12(2):90-94.
APA Yang Linlin,Guo Hengqun,Zeng Youhua,&Wang Qiming.(2006).360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals.Semiconductor Photonics and Technology,12(2),90-94.
MLA Yang Linlin,et al."360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals".Semiconductor Photonics and Technology 12.2(2006):90-94.
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