SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor
Huang Beiju; Chen Hongda; Liu Jinbin; Gu Ming; Liu Haijun
2006
Source Publication半导体学报
Volume27Issue:12Pages:2089-2093
AbstractWe propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the VπLπ product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
metadata_83institute of semiconductors,chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金,国家高技术研究发展计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:2634981
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16433
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Huang Beiju,Chen Hongda,Liu Jinbin,et al. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. 半导体学报,2006,27(12):2089-2093.
APA Huang Beiju,Chen Hongda,Liu Jinbin,Gu Ming,&Liu Haijun.(2006).A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor.半导体学报,27(12),2089-2093.
MLA Huang Beiju,et al."A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor".半导体学报 27.12(2006):2089-2093.
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