SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
磷化铟单晶衬底的缺陷控制和高质量表面制备
赵有文; 董志远; 孙文荣; 段满龙; 杨子祥; 吕旭如
2006
Source Publication半导体学报
Volume27Issue:12Pages:2127-2133
Abstract分析研究了一些缺陷对InP单晶衬底的影响,包括团状结构位错的产生及其对晶格完整性的影响,坑状微缺陷、晶片抛光损伤和残留杂质的清洗腐蚀等.对这些缺陷的形成原因和抑制途径进行了分析.在此基础上获得了"开盒即用(EPI-READY)"、具有良好晶格完整性、表面无损伤的InP单晶衬底抛光片.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:2635004
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16429
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
赵有文,董志远,孙文荣,等. 磷化铟单晶衬底的缺陷控制和高质量表面制备[J]. 半导体学报,2006,27(12):2127-2133.
APA 赵有文,董志远,孙文荣,段满龙,杨子祥,&吕旭如.(2006).磷化铟单晶衬底的缺陷控制和高质量表面制备.半导体学报,27(12),2127-2133.
MLA 赵有文,et al."磷化铟单晶衬底的缺陷控制和高质量表面制备".半导体学报 27.12(2006):2127-2133.
Files in This Item:
File Name/Size DocType Version Access License
4135.pdf(1263KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[赵有文]'s Articles
[董志远]'s Articles
[孙文荣]'s Articles
Baidu academic
Similar articles in Baidu academic
[赵有文]'s Articles
[董志远]'s Articles
[孙文荣]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[赵有文]'s Articles
[董志远]'s Articles
[孙文荣]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.