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nc-Ge/Si岛基光子晶体单点缺陷腔的数值模拟与分析
唐海侠; 王启明
2006
Source Publication半导体学报
Volume27Issue:12Pages:2139-2143
Abstract阐述了利用光子晶体单点缺陷微腔来提高Ge/Si纳米岛发光效率的机理.通过3D FDTD方法计算出在平板厚度为300nm时,谐振波长随a和r/a变化的规律,即当给定r/a,h时,波长随晶格常数成次线性增加;当给定a,h时,波长随r/a的增加而减小.并从理论上给予分析.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:2635006
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16427
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
唐海侠,王启明. nc-Ge/Si岛基光子晶体单点缺陷腔的数值模拟与分析[J]. 半导体学报,2006,27(12):2139-2143.
APA 唐海侠,&王启明.(2006).nc-Ge/Si岛基光子晶体单点缺陷腔的数值模拟与分析.半导体学报,27(12),2139-2143.
MLA 唐海侠,et al."nc-Ge/Si岛基光子晶体单点缺陷腔的数值模拟与分析".半导体学报 27.12(2006):2139-2143.
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