Knowledge Management System Of Institute of Semiconductors,CAS
| High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing | |
Kai Zheng; Tao Lin; Li Jiang; Jun Wang; Suping Liu; Xin Wei ; Guangze Zang; Xiaoyu Ma
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| 2006 | |
| Source Publication | Chinese Optics Letters
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| Volume | 4Issue:1Pages:27-29 |
| Abstract | The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD. |
| metadata_83 | institute of semiconductors, chinese academy of sciences |
| Subject Area | 半导体器件 |
| Funding Organization | The research was supported by the National Natural Science Foundation of China |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:2658687 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/16415 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Kai Zheng,Tao Lin,Li Jiang,et al. High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing[J]. Chinese Optics Letters,2006,4(1):27-29. |
| APA | Kai Zheng.,Tao Lin.,Li Jiang.,Jun Wang.,Suping Liu.,...&Xiaoyu Ma.(2006).High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing.Chinese Optics Letters,4(1),27-29. |
| MLA | Kai Zheng,et al."High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing".Chinese Optics Letters 4.1(2006):27-29. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4125.pdf（251KB） | 限制开放 | -- | Application Full Text | |||
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