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背照式GaN/AlGaN p-i-n紫外探测器的制备与性能
陈亮; 游达; 汤英文; 乔辉; 陈俊; 赵德刚; 张燕; 李向阳; 龚海梅
2006
Source Publication激光与红外
Volume36Issue:11Pages:1036-1039
Abstract文章研究了p-GaN/i—GaN/n-Al0.3Ga0.7N异质结背照式p-i—n可见盲紫外探测器的制备与性能。器件的响应区域为310~365nm,最大响应率为0.046A/W,对应的内量子效率为19%,优值因子R0A达到1.77×10^8Ω·cm^2,相应的在363nm处的探测率D^*=2.6×10^12cmHz^1/2W^-1。
metadata_83中国科学院上海技术物理研究所;中国科学院半导体研究所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:2665773
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16409
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈亮,游达,汤英文,等. 背照式GaN/AlGaN p-i-n紫外探测器的制备与性能[J]. 激光与红外,2006,36(11):1036-1039.
APA 陈亮.,游达.,汤英文.,乔辉.,陈俊.,...&龚海梅.(2006).背照式GaN/AlGaN p-i-n紫外探测器的制备与性能.激光与红外,36(11),1036-1039.
MLA 陈亮,et al."背照式GaN/AlGaN p-i-n紫外探测器的制备与性能".激光与红外 36.11(2006):1036-1039.
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