A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.
Dai Yang;Huang Yinglong;Liu Wei;Ma Long;Yang Fuhua;Wang Liangchen;Zeng Yiping;Zheng Houzhi.A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT,半导体学报,2007,28(3):332-336
