A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT

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	A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
	Dai Yang; Huang Yinglong; Liu Wei; Ma Long; Yang Fuhua; Wang Liangchen; Zeng Yiping; Zheng Houzhi
	2007
Source Publication	半导体学报
Volume	28 Issue:3 Pages:332-336
Abstract	A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.
metadata_83	research center of semiconductor integration, institute of semiconductors, chinese academy of sciences;institute of semiconductors, chinese academy of sciences;novel materials department, institute of semiconductors, chinese academy of sciences
Subject Area	半导体物理
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:2713288
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/16397
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Dai Yang,Huang Yinglong,Liu Wei,et al. A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT[J]. 半导体学报,2007,28(3):332-336.
APA	Dai Yang.,Huang Yinglong.,Liu Wei.,Ma Long.,Yang Fuhua.,...&Zheng Houzhi.(2007).A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT.半导体学报,28(3),332-336.
MLA	Dai Yang,et al."A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT".半导体学报 28.3(2007):332-336.

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