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A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT | |
Dai Yang; Huang Yinglong; Liu Wei![]() | |
2007 | |
Source Publication | 半导体学报
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Volume | 28Issue:3Pages:332-336 |
Abstract | A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz. |
metadata_83 | research center of semiconductor integration, institute of semiconductors, chinese academy of sciences;institute of semiconductors, chinese academy of sciences;novel materials department, institute of semiconductors, chinese academy of sciences |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:2713288 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/16397 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Dai Yang,Huang Yinglong,Liu Wei,et al. A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT[J]. 半导体学报,2007,28(3):332-336. |
APA | Dai Yang.,Huang Yinglong.,Liu Wei.,Ma Long.,Yang Fuhua.,...&Zheng Houzhi.(2007).A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT.半导体学报,28(3),332-336. |
MLA | Dai Yang,et al."A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT".半导体学报 28.3(2007):332-336. |
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