SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
键合方法制备长波长面发射的实验和分析
何国荣; 郑婉华; 渠红伟; 杨国华; 王青; 吴旭明; 曹玉莲; 陈良惠
2007
Source Publication半导体学报
Volume28Issue:3Pages:444-447
Abstract通过疏水键合方法实现了InGaAsP/InP有源区与GaAs/AlAs DBR的单面和双面键合,并通过SEM,I-V曲线和反射谱、光致发光谱等手段研究了GaAs/InP键合界面的机械、光学和电学性质,良好的界面性质为使用键合技术制备长波长面发射激光器提供了可能性.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家重点基础研究发展计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2713308
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16395
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
何国荣,郑婉华,渠红伟,等. 键合方法制备长波长面发射的实验和分析[J]. 半导体学报,2007,28(3):444-447.
APA 何国荣.,郑婉华.,渠红伟.,杨国华.,王青.,...&陈良惠.(2007).键合方法制备长波长面发射的实验和分析.半导体学报,28(3),444-447.
MLA 何国荣,et al."键合方法制备长波长面发射的实验和分析".半导体学报 28.3(2007):444-447.
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