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题名: Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD
作者: Li Jiaye;  Zhao Yongmei;  Liu Xingfang;  Sun Guosheng;  Luo Muchang;  Wang Lei;  Zhao Wanshun;  Zeng Yiping;  Li Jinmin
发表日期: 2007
摘要: 50mm 3C-SiC epilayers are grown on (100) and (111) Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H_2 carrier gas. The structure,electrical properties, and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction (XRD) ,sheet resistance measurement, and spectroscopic ellipsometry. XRD patterns show that the 3C-SiC films have excellent crystallinity. The narrowest full widths at half maximum of the SIC(200) and (111) peaks are 0.41° and 0.21°, respectively. The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%. A σ/mean value of ± 5.7% in thickness uniformity is obtained.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Li Jiaye;Zhao Yongmei;Liu Xingfang;Sun Guosheng;Luo Muchang;Wang Lei;Zhao Wanshun;Zeng Yiping;Li Jinmin.Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD,半导体学报,2007,28(1):1-4
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