SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD
Li Jiaye; Zhao Yongmei; Liu Xingfang; Sun Guosheng; Luo Muchang; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin
2007
Source Publication半导体学报
Volume28Issue:1Pages:1-4
Abstract50mm 3C-SiC epilayers are grown on (100) and (111) Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H_2 carrier gas. The structure,electrical properties, and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction (XRD) ,sheet resistance measurement, and spectroscopic ellipsometry. XRD patterns show that the 3C-SiC films have excellent crystallinity. The narrowest full widths at half maximum of the SIC(200) and (111) peaks are 0.41° and 0.21°, respectively. The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%. A σ/mean value of ± 5.7% in thickness uniformity is obtained.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:2741719
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16383
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li Jiaye,Zhao Yongmei,Liu Xingfang,et al. Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD[J]. 半导体学报,2007,28(1):1-4.
APA Li Jiaye.,Zhao Yongmei.,Liu Xingfang.,Sun Guosheng.,Luo Muchang.,...&Li Jinmin.(2007).Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD.半导体学报,28(1),1-4.
MLA Li Jiaye,et al."Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD".半导体学报 28.1(2007):1-4.
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